University of Manchester Breakthrough: MoS₂ Layer Reduces Energy Loss in Magnetic Memory

Scientists at the University of Manchester have made a significant advancement in spintronics, discovering that placing magnetic films on atomically thin molybdenum disulfide (MoS₂) fundamentally alters how energy is lost, potentially paving the way for more efficient magnetic memory technologies. The research, published in Physical Review Applied, demonstrates that this approach isn’t limited to laboratory settings but is scalable for real-world applications.

Understanding the Energy Loss Challenge in Spintronics

Spintronics, an alternative to conventional electronics, utilizes both the charge and spin of electrons to store and process information. This technology holds promise for faster, more energy-efficient computing and advanced magnetic memory. However, a major hurdle in spintronics is energy loss. As magnetic spins move, energy dissipates as heat, limiting device speed and efficiency.

How MoS₂ Impacts Magnetic Film Behavior

The research team focused on permalloy, a widely used magnetic alloy, grown on ultra-thin MoS₂. They found that this configuration alters the film’s internal crystal structure, changing how and where energy is lost as magnetic spins move. Specifically, the ultra-clean interface between permalloy and MoS₂ reduces energy loss at the surface of the magnetic film, while subtle changes within the film’s crystal structure slightly increase internal energy loss.

Separating Surface and Bulk Energy Losses

A key achievement of the study was the ability to separate these surface and bulk energy loss effects. By varying the thickness of the magnetic layer and using ferromagnetic resonance – a technique that measures how quickly a magnetic wobble fades – the researchers could distinguish between losses occurring at the surface and those within the bulk of the film. This separation helps explain conflicting results from previous studies exploring 2D materials and magnetism.

Large-Area MoS₂ for Scalable Technologies

Crucially, the study utilized large-area MoS₂ produced using chemical vapor deposition (CVD), a manufacturing-compatible process. This demonstrates that the observed effects are not confined to small-scale samples and are relevant for scalable spintronic technologies. The research builds on previous function investigating spin pumping effects in MoS₂/permalloy bilayers, published in January 2026.

Implications for Next-Generation Memory

The findings point to new strategies for designing lower-power, faster spintronic memory. By engineering material interfaces to minimize unwanted energy loss, researchers can improve device performance. As Dr. Henry De Libero, lead author of the study and Research Associate in THz Spintronics at the University of Manchester, stated, “We’ve shown how these changes affect energy loss, which is a crucial property for next-generation memory technologies.”

The Role of Transition Metal Dichalcogenides

The study highlights the potential of transition-metal dichalcogenides (TMDs), like MoS₂, to alter the fundamental properties of magnetic films. It emphasizes the importance of comparing materials carefully when assessing the impact of 2D layers on magnetic behavior. Further research into TMDs, including studies on RuWTe2 hybrid monolayers, continues to explore their magnetic potential.

This research represents a significant step towards realizing the full potential of 2D-material spintronics and developing more efficient and powerful magnetic memory devices.